产品简介
电阻率厚度测试仪 产品型号:进口 The system consists of the measuring head, an electronic rack linked by one standard cable
公司简介
北京羲和阳光科技发展有限公司是一家新能源科技公司,致力于太阳能光伏产业。提供光伏生产所用硅料的分选、检验、检测设备及相关设备配件,帮助您识别高质量的硅料,减少采购或销售的风险。
我公司经营的主要产品有:硅料分选测试仪(电阻率,PN型识别)、电阻测试仪、排重掺测试仪、少子寿命测试仪、测厚仪、碳氧磷硼含量测试仪,表面线痕测试仪,光谱椭偏仪,透过率测试仪、相关产品配件,以及镓掺杂剂、母合金掺杂剂,异丙醇,双氧水等耗材。
羲和的名称来源于中国的太阳神羲和女神,作为太阳能光伏产业的一份子,为提高太阳能电池生产过程的可控性,最大限度的减少过程风险,羲和科技在不懈追求、积极探索,我们深感肩头的重任,我们会倍加努力,持之以恒,给您提供最优质的产品、最优惠的价格和最满意的服务。
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产品说明
电阻率厚度测试仪
产品型号:进口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connector and a PC.
功能特点
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from top and one from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledge and can be moved simultaneously equidistant to
the center by means of a manually moved lever.
Before and behind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer forms or misalignments. To ensure safe start and finish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement values and to
arm/disarm measurements.
技术参数
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm (1 scan only)
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm (thk.=240μm)
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
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